| 标题 |
Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:J. Chen; T. Sekiguchi; N. Fukata; M. Takase; T. Chikyow; et al 出版日期:2006-11-30 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)