| 标题 |
SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition |
| 网址 | |
| DOI | |
| 其它 |
期刊:Japanese Journal of Applied Physics 作者:Keito Aoshima; Noriyuki Taoka; Masahiro Horita; Jun Suda 出版日期:2022-01-27 |
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(2025-6-4)