| 标题 |
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations |
| 网址 | |
| DOI | |
| 其它 |
期刊:IBM Journal of Research and Development 作者:D. A. Antoniadis; I. Aberg; C. Ni Chleirigh; O. M. Nayfeh; A. Khakifirooz; et al 出版日期:2006-07-01 |
| 求助人 | |
| 下载 |
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(2025-6-4)