Lv7
4570 积分 2024-04-03 加入
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
18天前
已完结
High Performance Millimeter-Wave AlGaN/GaN Fin-HEMT on Si Substrate
5个月前
已完结
High-temperature power performance of X-band recessed-gate AlGaN/GaN HEMTs
6个月前
已完结
Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs
8个月前
已完结
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
8个月前
已完结
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
8个月前
已完结
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment
8个月前
已完结
Enhanced Ion/Ioff ratio and RF performance for gate all around (GAA) AlGaN/GaN with GaN cap layer fin-HEMT for higher gate capacitance for improved RF communication
8个月前
已完结
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
8个月前
已完结
Ohmic contacts on p-GaN (Part II):
9个月前
已完结
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