| 标题 |
Enhanced Avalanche Capability and Ruggedness in 4H-SiC p-i-n Diode by Low-Angle Positive Beveled Edge Termination |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Yu Zhou; Yibo Zhang; Xiaoyan Tang; Jingkai Guo; Hao Yuan; et al 出版日期:2026-03-07 |
| 求助人 | |
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(2025-6-4)