| 标题 |
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation |
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| 其它 |
期刊:AIP Advances 作者:Arnar M. Vidarsson; Daniel Haasmann; Sima Dimitrijev; Einar Ö. Sveinbjörnsson 出版日期:2023-05-13 |
| 求助人 | |
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(2025-6-4)