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Sequential Gate and Field Plate Optimization in N-Polar GaN HEMTs for High Breakdown Voltage and RF Efficiency
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Sequential Gate and Field Plate Optimization in N-Polar GaN HEMTs for High Breakdown Voltage and RF Efficiency Published: 31 July 2026 Volume 60, pages 907–924 (2026) Cite this article 期刊Semiconductors |
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