| 标题 |
Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga 2 O 3 (001) Trench Schottky Barrier Diodes Using H 3 PO 4 Treatment |
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| DOI | |
| 其它 |
期刊:ACS Applied Electronic Materials 作者:Min-Yeong Kim; Aditya Kundapura Bhat; Sai Charan Vanjari; Matthew D. Smith; Martin Kuball 出版日期:2026-03-06 |
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(2025-6-4)