Lv5
866 积分 2025-11-12 加入
Demonstration of enhanced electrical and thermal stability in NiO/Ga2O3 heterojunction diode adopting Li-doped p-type NiO
5小时前
已关闭
Enhanced Leakage Current and On-Resistance of β Gallium Oxide Schottky Barrier Diodes Using Effective Surface Modification
5天前
已关闭
Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping
10天前
已完结
Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation
10天前
已完结
Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension
12天前
已关闭
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
17天前
已完结
1.4 kV β-Ga2O3 VDMOSFET with high-temperature nitrogen-implanted current blocking layer
19天前
已完结
Nitrogen-graded electrostatic compensation for normally-off β-Ga2O3 planar-gate current-aperture vertical electron transistors
27天前
已完结
Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD
28天前
已完结
Enhanced electrochromism in short wavelengths for NiO:(Li, Mg) films in full inorganic device ITO/NiO:(Li, Mg)/Ta2O5/WO3/ITO
1个月前
已完结