Lv4
600 积分 2025-11-12 加入
Variation of Ga vacancy concentration induced by rapid thermal annealing in β-Ga2O3
5天前
已完结
Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes
13天前
已关闭
1.5 kV NiO/Ga 2 O 3 Vertical Heterojunction Diodes Based on Lightly Doped Single‐Crystal Substrate with In Situ Ohmic Contact Formation
13天前
已完结
Optimization of Characteristics in NiOx/β-Ga2O3 Heterojunction Diodes with Surface Treatment
13天前
已关闭
Defect engineering in NiO/β-Ga2O3 p-n heterojunction diodes via post-deposition annealing for power electronics
13天前
已关闭
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
13天前
已关闭
Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga 2 O 3 (001) Trench Schottky Barrier Diodes Using H 3 PO 4 Treatment
13天前
已关闭
Dry etch damage anisotropy and damage mitigation using hot H3PO4 in (001) β-Ga2O3 Schottky diodes
13天前
已关闭
Enhancement of positive bevel β-Ga2O3 trench MOS barrier Schottky diode by post-etching treatment
13天前
已完结
Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments
13天前
已完结
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