| 标题 |
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes |
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| DOI | |
| 其它 |
期刊:IEEE Journal of the Electron Devices Society 作者:Zhenyu Qu; Wenhui Xu; Tiangui You; Zhenghao Shen; Tiancheng Zhao; et al 出版日期:2023-01-01 |
| 求助人 | |
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(2025-6-4)