| 标题 |
Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications |
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| DOI | |
| 其它 |
期刊:Semiconductor Science and Technology 作者:R Singh; I Radu; G Bruederl; C Eichler; V Haerle; et al 出版日期:2007-03-19 |
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(2025-6-4)