| 标题 |
From Planar to Gate-All-Around: Stability and Reliability of Scaled 2D FETs |
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| DOI | |
| 其它 |
期刊:2025 IEEE International Electron Devices Meeting (IEDM) 作者:A. Provias; R. Ghosh; M. R. Davoudi; A. Karl; T. Knobloch; et al 出版日期:2026-01-31 |
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(2025-6-4)