| 标题 |
Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Xinchen Ge; Haoran Qie; Xiaolu Guo; Yaozong Zhong; Xin Chen; et al 出版日期:2025-10-14 |
| 求助人 | |
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(2025-6-4)