| 标题 |
Interface-Engineered Hafnia–MoS2 Ferroelectric Field-Effect Transistors Enabling a Nearly Ideal Memory Window with Back-End-of-Line Compatibility |
| 网址 | |
| DOI | |
| 其它 |
期刊:ACS Nano 作者:Jaeho Lee; Jihoon Jeon; Jeonglyul Kim; Beomjun Kim; Sihun Kim; et al 出版日期:2026-08-30 |
| 求助人 | |
| 下载 |
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(2025-6-4)