| 标题 |
Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis |
| 网址 | |
| DOI | |
| 其它 |
期刊:2011 International Electron Devices Meeting 作者:Shimeng Yu; Rakesh Jeyasingh; Yi Wu; H.-S. Philip Wong 出版日期:2011-12-01 |
| 求助人 | |
| 下载 |
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(2025-6-4)