| 标题 |
p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors |
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| DOI | |
| 其它 |
期刊:ACS Applied Materials & Interfaces 作者:Ryoichi Kato; Haruki Uchiyama; Tomonori Nishimura; Keiji Ueno; Takashi Taniguchi; et al 出版日期:2023-05-24 |
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(2025-6-4)