| 标题 |
 Li Q, et al. Oxygen vacancy modulation of Fermi level without altering intrinsic band offsets at amorphous oxide/Si heterointerfaces |
| 网址 | |
| DOI |
10.1016/j.apsusc.2024.158891
doi
|
| 求助人 | |
| 下载 | 暂无链接，等待应助者上传 |
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