| 标题 |
A Novel Notched-Gate LDMOS for Robust Reliability via Electric Field Modulation and Low Gate Charge on 55-nm BCD Platform |
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| 其它 |
期刊:2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Dingxiang Ma; Hanwen Bai; Fanyi Zeng; Jiawei Wang; Yangjie Liao; et al 出版日期:2026-06-12 |
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(2025-6-4)