| 标题 |
Effect of high temperature annealing in hydrogen on reduction of thermally-induced carbon-related defects in 4H-SiC near surface region |
| 网址 | |
| DOI | |
| 其它 |
期刊:Japanese Journal of Applied Physics 作者:Chuyang Lyu; Takashi Onaya; Koji Kita 出版日期:2026-05-18 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)