| 标题 |
Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer |
| 网址 | |
| DOI | |
| 其它 |
期刊:Thin Solid Films 作者:Po-Yung Liao; Ting-Chang Chang; Tien-Yu Hsieh; Ming-Yen Tsai; Bo-Wei Chen; et al 出版日期:2016-01-29 |
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(2025-6-4)