| 标题 |
 Insight into Suppressed Positive Bias Temperature Instability by Forming Gas Annealing on n-type Vertical C-shaped Channel Nanosheet FET |
| 网址 | |
| DOI |
10.1109/j.mee.2025.112357
doi
|
| 求助人 | |
| 下载 |
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(2025-6-4)
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