| 标题 |
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition |
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| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Akihiro Shimada; Haruna Shiomi; Tetsuya Tohei; Yusuke Hayashi; Masaya Yamaguchi; et al 出版日期:2025-08-15 |
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(2025-6-4)