| 标题 |
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Electron Device Letters 作者:Dongsheng Cui; Yawei Du; Zhenhua Lin; Mengyang Kang; Yifei Wang; et al 出版日期:2022-12-16 |
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(2025-6-4)