| 标题 |
Amorphous InHfZnO/Ga2O3 heterojunction by plasma-enhanced atomic layer deposition for transparent photoelectric synaptic devices with temperature-tunable mechanism analysis |
| 网址 | |
| DOI |
10.1088
doi
|
| 求助人 | |
| 下载 |
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(2025-6-4)