| 标题 |
Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress |
| 网址 | |
| DOI | |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)