| 标题 |
Atomic simulation of the mechanism for GaN removal by coupling texture depth and grinding depth under water lubrication conditions |
| 网址 | |
| DOI | |
| 其它 |
期刊:Materials Science in Semiconductor Processing 作者:Houfu Dai; Zhihao Shang; Yanguang Zhou; Ze Liu; Bouachanh Sihavong; et al 出版日期:2026-07-01 |
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(2025-6-4)