| 标题 |
Analysis of leakage current in ScAlN thin films grown on GaN/sapphire substrates by sputtering epitaxy at various temperatures |
| 网址 | |
| DOI | |
| 其它 |
期刊:Japanese Journal of Applied Physics 作者:Kosuke Joya; Sawaki Sato; Atsushi Kobayashi; Takuya Maeda 出版日期:2026-10-14 |
| 求助人 | |
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(2025-6-4)