| 标题 |
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors |
| 网址 | |
| DOI | |
| 其它 |
期刊:Superlattices and Microstructures 作者:Guangyuan Jiang; Yuanjie Lv; Zhaojun Lin; Yang Liu; Mingyan Wang; et al 出版日期:2021-07-10 |
| 求助人 | |
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(2025-6-4)