| 标题 |
A Gate-All-Around Oxide Semiconductor FETs With Selectively Crystallized InGaOₓ Channel for Performance and Reliability Improvement |
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期刊:IEEE Transactions on Electron Devices 作者:Ki-Woong Park; Anlan Chen; Kota Sakai; Sunbin Hwang; Xingyu Huang; et al 出版日期:2025-09-18 |
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(2025-6-4)