| 标题 |
Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Zongzhe Cheng; M. Hanke; P. Vogt; O. Bierwagen; A. Trampert 出版日期:2017-10-16 |
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(2025-6-4)