| 标题 |
RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing |
| 网址 | |
| DOI | |
| 其它 |
期刊:2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 作者:M. Perrosé; P. Acosta Alba; M. Moulin; E. Augendre; J. Lugo; et al 出版日期:2023-02-22 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)