| 标题 |
Physical Insights Into the Impact of p-GaN Sidewall Passivation on Gate Leakage, Threshold Voltage Instability, and Gate Breakdown Behavior in p-GaN Gate AlGaN/GaN HEMTs |
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| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Rasik Rashid Malik; Vipin Joshi; Simran R. Karthik; Rajarshi Roy Chaudhuri; Mayank Shrivastava 出版日期:2026-03-03 |
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(2025-6-4)