| 标题 |
Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Masashi Kato; Zhang Xinchi; Kimihiro Kohama; Shuhei Fukaya; Masaya Ichimura 出版日期:2020-05-15 |
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(2025-6-4)