| 标题 |
Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2 /HfO 2 gate dielectric stack |
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| DOI | |
| 其它 |
期刊:Nanoscale 作者:Amirhasan Nourbakhsh; Ahmad Zubair; Sameer Joglekar; Mildred Dresselhaus; Tomás Palacios 出版日期:2017-01-01 |
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(2025-6-4)