| 标题 |
Behavior of excess donor-like defects induced by implantation of various ion species and subsequent annealing in n-type GaN layers |
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| DOI | |
| 其它 |
期刊:Japanese Journal of Applied Physics 作者:Hiroko Iguchi; Masahiro Horita; Keita Kataoka; Tetsuo Narita; Tetsu Kachi; et al 出版日期:2026-02-04 |
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(2025-6-4)