| 标题 |
First-Principles Study of N2 or H2/N2 Plasma Pretreatment: Effects on the Interface Properties in Si3N4/AlN/GaN MIS-HEMTs |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Jiaofen Yang; Ming Tao; Jing Xiao; Kai Tang; Yilan Chen; et al 出版日期:2026-05-01 |
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(2025-6-4)