材料科学
电容器
铁电性
电介质
储能
溅射
光电子学
薄膜
粒度
极化(电化学)
薄膜电容器
电压
复合材料
纳米技术
电气工程
化学
功率(物理)
工程类
物理
物理化学
量子力学
作者
Kun Wang,Hanfei Zhu,Jun Ouyang,Yun Tian,Sixu Wang,Qian Li,Yuchen Zhao,Hongbo Cheng,Xiao Zhai
标识
DOI:10.1016/j.apsusc.2021.152400
摘要
For the development of high energy density ferroelectric film/multilayer capacitors, which have applications in electric power systems and advanced pulsed-discharge devices, a stable energy storage performance in a wide range of temperature, frequency and cycling times has become extremely important. Here, we propose an effective method to boost the energy storage stabilities of ferroelectric film capacitors through the use of a nanoengineered film structure with a reduced dielectric nonlinearity. We show in (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 (BSZT) ferroelectric films that such an approach is facilitated by reducing the size of sputtered columnar nanograins via a synergetic effect between a low temperature deposition process and a buffer-layer technique. In comparison with the BSZT films sputtered at 500 °C which are better ferroelectrics, the 400 °C-sputtered BSZT films not only showed an improved energy storage density and efficiency, but also displayed a reduced dielectric nonlinearity in its polarization response. The latter has led to a significantly improved energy storage stability under a changing temperature (−175 oC ∼ 200 °C) or frequency (1 Hz ∼ 20 kHz), or after a large amount of charge–discharge cycles (up to 2 × 109).
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