记忆电阻器
整改
神经形态工程学
非线性系统
计算机科学
系列(地层学)
人工神经网络
人工智能
突触
深度学习
控制理论(社会学)
电子工程
电压
物理
电气工程
工程类
神经科学
古生物学
生物
量子力学
控制(管理)
作者
Rui Wang,Liang Qi,Saisai Wang,Yaxiong Cao,Xiaohua Ma,Hong Wang,Yue Hao
摘要
Herein, a self-rectifying resistive switching memristor synapse with a Ta/NbOx/Pt structure was demonstrated for deep reservoir computing (RC). The memristor demonstrated stable nonlinear analog switching characteristics, with a rectification ratio of up to 1.6 × 105, good endurance, and high uniformity. Additionally, the memristor exhibited typical short-term plasticity and dynamic synaptic characteristics. Based on these characteristics, a deep memristor RC system was proposed for time series prediction. The system achieved a low normalized root mean square error (NRMSE) of 0.04 in the time series prediction of the Henon map. Even at 90 °C, deep RC retains good predictive power with an NRMSE of only 0.07. This work provides guidance for efficient deep memristive RC networks to handle more complex future temporal tasks.
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