Halide Perovskites‐Based Diffusive Memristors for Artificial Mechano‐Nociceptive System

Abstract Numerous efforts for emulating organ systems comprised of multiple functional units have driven substantial advancements in bio‐realistic electronics and systems. The resistance change behavior observed in diffusive memristors shares similarities with the potential change in biological neurons. Here, the diffusive threshold switching phenomenon in Ag‐incorporated organometallic halide perovskites is utilized to demonstrate the functions of afferent neurons. Halide perovskites‐based diffusive memristors show a low threshold voltage of ≈0.2 V with little variation, attributed to the facile migration of Ag ions uniformly dispersed within the halide matrix. Based on the reversible and reliable volatile threshold switching, the memristors successfully demonstrate fundamental nociceptive functions including threshold firing, relaxation, and sensitization. Furthermore, to replicate the biological mechano‐nociceptive phenomenon at a system level, an artificial mechano‐nociceptive system is built by integrating a diffusive memristor with a force‐sensing resistor. The presented system is capable of detecting and discerning the detrimental impact caused by a heavy steel ball, effectively exhibiting the corresponding sensitization response. By further extending the single nociceptive system into a 5 × 5 array, successful stereoscopic nociception of uneven impulses is achieved in the artificial skin system through array‐scale sensitization. These results represent significant progress in the field of bio‐inspired electronics and systems.