材料科学
光电探测器
半导体
有机半导体
光电子学
纳米技术
作者
Bingyan Yin,Xianju Zhou,Yuyang Li,Gangjian Hu,Wei Wu,Mingqun Yang,Seonghun Jeong,Wanling Deng,Baoqi Wu,Yunhao Cao,Bo Huang,Langheng Pan,Xiao‐Ru Yang,Zhengyi Fu,Yanjun Fang,Liang Shen,Changduk Yang,Hongbin Wu,Linfeng Lan,Fei Huang,Yong Cao,Chunhui Duan
标识
DOI:10.1002/adma.202310811
摘要
Abstract Detecting short‐wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, we report the development of high‐sensitivity SWIR‐OPDs with an efficient photoelectric response extending up to 1.3 μm. These OPDs utilize a new ultralow‐bandgap molecular semiconductor featuring a quinoidal tricyclic electron‐deficient central unit and multiple non‐covalent conformation locks. The SWIR‐OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a –4 V bias at 1.10 μm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal‐generation carriers and dark current, resulting in excellent detectivity ( D sh * ) exceeding 10 13 Jones from 0.50 to 1.21 μm and surpassing 10 12 Jones even at 1.30 μm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation through photoplethysmography measurements, a spectrometer prototype in the 0.35–1.25 μm range, and image capture under 1.20 μm irradiation demonstrate the extensive applications of this SWIR‐OPD. This article is protected by copyright. All rights reserved
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