Chiral Metal-Halide Hybrid Semiconductors for Interconverting Spin, Charge and Light at Room Temperature

Chiral Metal-Halide Hybrid Semiconductors for Interconverting Spin, Charge and Light at Room TemperatureMatthew Beard aa National Renewable Energy Laboratory, 15013 Denver W Pkwy, Golden, CO 80401, United StatesMaterials for Sustainable Development Conference (MATSUS)Proceedings of MATSUS Spring 2024 Conference (MATSUS24)#Chiral24 - Chiral Nanomaterials: Synthesis, Structure, and PropertiesBarcelona, Spain, 2024 March 4th - 8thOrganizers: Dmitry Baranov and Sandrine IthurriaInvited Speaker, Matthew Beard, presentation 292DOI: https://doi.org/10.29363/nanoge.matsus.2024.292Publication date: 18th December 2023In this presentation I will discuss our studies of controlling the spin currents using chiral metal-halide hybrid semiconductors thru the chiral induced spin-selectivity (CISS) effect. Chirality is introduced through an enantiomerically pure organic ammine as the A-site in layered 2D Ruddlesden-Popper type structures. The inorganic component make up the layers and are either lead or tin halide. Chirality is introduced into the inorganic component thru structural distortions and chiral arrangement of the organic components. We have studied this chiral transfer in the 2D layered systems, 0D dimer inorganic structures, and in metal-halide semiconductor nanocrystals with chiral ligands attached. These systems exhibit CISS whereby only one spin sense can transport across the chiral layer and the other spin sense is blocked for one handedness of the chiral perovskite layer. We show that chiral perovskite layers are able to achieve > 80% spin-current polarization using magnetic conductive probe AFM. We have demonstrated the CISS effect in a half spin-valve where only one of the contacts is a ferromagnet and these results agree with the magnetic conductive probe AFM measurements. However, to enable a broader range of opto-electronic functionality achieving spin accumulation in traditional semiconductor structures at room temperature and without magnetic fields is key. Current efforts that employ ferromagnet/semiconductor interfaces is limited due to the conductivity mismatch. We have demonstrated spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V [MH1] (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The MQW is recieved as a working LED and it's internal structure was not modified. The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. Characterization of the chiral perovskite/III-V interface demonstrates a clean conformal semiconductor/semiconductor electrical contact where the fermi-level can equilibrate. Our findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin at room temperature. Acknowledgements:We aknowledge funding for this work through the Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE) an EFRC funded by the Office of Science within the US Department of Energy. © FUNDACIO DE LA COMUNITAT VALENCIANA SCITOnanoGe is a prestigious brand of successful science conferences that are developed along the year in different areas of the world since 2009. 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