铁电性
材料科学
晶体管
纳米电子学
铁电聚合物
场效应晶体管
负阻抗变换器
神经形态工程学
石墨烯
纳米技术
光电子学
电气工程
计算机科学
电压
电介质
工程类
电压源
机器学习
人工神经网络
作者
Zhaoying Dang,Feng Guo,Zhenghao Wu,Kui Jin,Jianhua Hao
标识
DOI:10.1002/apxr.202200038
摘要
Abstract Ferroelectric materials with switchable electrical polarization have been widely used in tunnel junctions, non‐volatile memories, and field‐effect transistors. Large‐area organic ferroelectric polymers compatible with silicon or flexible substrates have played a crucial role in nanoelectronics. Poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐TrFE) as a representative, different from traditional bulk oxide ferroelectrics in terms of atom arrangements and fabrication methods, has frequently been used as the ferroelectric gate for high‐performance electronic, optical, and synaptic transistors. Ferroelectric copolymers have gradually become a promising and versatile alternative for inorganic ferroelectrics. This review will focus on the interface engineering and device applications of 2D materials/ferroelectric P(VDF‐TrFE) hybrid structures. The intrinsic ferroelectric properties and unique features of P(VDF‐TrFE) are first elucidated. Next, typical device structures with ferroelectric gating effect followed by its physical working mechanisms will be discussed. In the next section, diverse nanoelectronics applications of ferroelectric field effect transistors based on P(VDF‐TrFE), including optoelectronic devices, non‐volatile memories, neuromorphic computing, and negative capacitance transistors, are clarified. Moreover, existing challenges and further development for ferroelectric polymer will be discussed. With an emphasis on the ferroelectric polymer gate and related issues, this review provides a timely summary of current physical understanding and progresses.
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