极紫外光刻
平版印刷术
极端紫外线
抵抗
纳米技术
材料科学
光掩模
光刻
国家实验室
工程物理
光学
物理
光电子学
激光器
图层(电子)
作者
Christopher K. Ober,Florian Käfer,Chenyun Yuan
出处
期刊:Polymer
[Elsevier]
日期:2023-07-01
卷期号:280: 126020-126020
被引量:6
标识
DOI:10.1016/j.polymer.2023.126020
摘要
This report describes recent developments and current needs in the field of high-resolution photopolymers and photomolecules briefly describing prior generation lithographic patterning materials. It subsequently concentrates on recent advances in both inorganic and polymeric materials for extreme ultraviolet (EUV) lithography. It is also part of a series of papers written in celebration of the centenary of the Polymeric Materials: Science and Engineering (PMSE) division of the American Chemical Society (ACS). PMSE has long been home to polymer chemists who have made important contributions to advances in semiconductor manufacturing as a result of PMSE's focus on polymer coatings research. While EUV lithography has been an area of research for several decades, only within the last 5 years has the combination of new light sources, EUV optics, tool advances and resist discoveries come together to transition this area from the patterning method of the future to a leading-edge manufacturing technology. (148 words).
科研通智能强力驱动
Strongly Powered by AbleSci AI