Comparison of SiNx Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices

To address the issue of heat dissipation caused by the high output power density of gallium nitride (GaN) devices, using diamond‐integrated devices is an effective solution. Recent studies have suggested that incorporating a dielectric layer, such as silicon nitride (SiN x ), between diamond and GaN can improve adhesion while also reducing thermal boundary resistance (TBR). In this study, plasma‐enhanced chemical vapor deposition (CVD), low‐pressure CVD, and metal‐organic CVD (MOCVD) techniques are utilized to grow the SiN x layer. The interface behavior of diamond/SiN x /GaN is analyzed through scanning electron microscopy, transmission electron microscopy (TEM), scanning TEM, and energy‐dispersive X‐ray spectroscopy, while time‐domain thermoreflectance measurement is used to characterize thermal properties. After analyzing the impact of the growth dielectric layer on the interface thermal resistance of the three growth modes, it is concluded that the dielectric layer produced by the MOCVD technique exhibits a smoother surface and lower TBR compared to the other two methods. Therefore, the use of the MOCVD technique is recommended to achieve optimal thermal performance in diamond/SiN x /GaN systems.