四甲基氢氧化铵
蚀刻(微加工)
异丙醇
硅
微电子机械系统
材料科学
表面粗糙度
表面光洁度
反应离子刻蚀
氢氧化钾
表面微加工
干法蚀刻
纳米技术
化学工程
光电子学
分析化学(期刊)
复合材料
图层(电子)
化学
制作
色谱法
医学
替代医学
病理
工程类
作者
Kalpathy B. Sundaram,Arun Vijayakumar,Ganesh Subramanian
标识
DOI:10.1016/j.mee.2004.11.004
摘要
Etching of silicon plays an important role in the field of micromachining. In this study, etching was performed on (1 0 0), (1 1 0) and (1 1 1) silicon using tetramethylammonium hydroxide (TMAH). The roughness of the etched silicon surface was studied as a function of the etching parameters. Etching was carried out at three different temperatures with varying solution concentrations with and without isopropyl alcohol. Emphasis was placed on the roughness of the silicon surface obtained after etching. It was observed that roughness is highly dependent on the solution concentration and temperature. Based on the experimental results and theoretical considerations, the etching mechanism has been explained.
科研通智能强力驱动
Strongly Powered by AbleSci AI