Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films

The influence of interfacial structure on the resistance switching behavior of Ta/Pr0.7Ca0.3MnO3/Pt films was investigated by varying the reactive Ta electrode thickness. Structure and component analyses revealed that a TaOx layer formed at the interface and its thickness increased with the Ta thickness in the thin region while staying the same in the thick region. The similar thickness dependences of the negative differential resistance and resistance switching characteristics were observed and interpreted by the TaOx thickness dependent oxidization and reduction reaction across the interfacial region. This study demonstrates that the resistance switching characteristics could be improved by suitable interfacial engineering.