闪烁体
光电二极管
光电子学
光学
物理
材料科学
电气工程
探测器
工程类
作者
Han Soo Kim,Se Hwan Park,Jang Ho Ha,Dong-Hoon Lee,Seung Yeon Cho
标识
DOI:10.1109/tns.2010.2046334
摘要
Recently a PIN photodiode is more widely used than a conventional PMT, because it requires less bias to operate it and it is very compact. A PIN photodiode was designed and fabricated for a matching with a CsI(Tl) scintillator in consideration of low leakage current and high biasing voltage. Leakage current and spectral response were measured with the fabricated PIN photodiode as preliminary tests. A CsI(Tl)/PIN photodiode radiation detector was also fabricated and about 10.4% FWHM was achieved at 662 keV gamma-ray. In this study, characteristics of a fabricated PIN photodiode and a CsI(Tl)/PIN photodiode radiation detector were presented. Several important aspects to consider in the fabrication of a Si PIN photodiode radiation detector are also addressed.
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