硅
纳米
材料科学
相(物质)
溶剂
六方晶系
化学工程
航程(航空)
金属
纳米技术
结晶学
化学
有机化学
光电子学
复合材料
冶金
工程类
出处
期刊:Science
[American Association for the Advancement of Science]
日期:1992-11-13
卷期号:258 (5085): 1131-1133
被引量:283
标识
DOI:10.1126/science.258.5085.1131
摘要
A liquid-solution-phase technique for preparing submicrometer-sized silicon single crystals is presented. The synthesis is based on the reduction of SiCl(4) and RSiCl(3) (R = H, octyl) by sodium metal in a nonpolar organic solvent at high temperatures (385 degrees C) and high pressures (> 100 atmospheres). For R = H, the synthesis produces hexagonal-shaped silicon single crystals ranging from 5 to 3000 nanometers in size. For R = octyl, the synthesis also produces hexagonal-shaped silicon single crystals; however, the size range is controlled to 5.5 +/- 2.5 nanometers.
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