Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

In this letter, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and characterized. The drain current density, transconductance, and on-resistance were improved by reducing the length of the nanochannel, which was attributed to the modulation of access resistance by changing the length of the nanochannel. The threshold voltage shifted to the positive direction with the decrease in the width of the nanochannel and showed the independence on the length of the nanochannel. With the reduction in the length of the nanochannel, the gate swing was increased by suppressing the increase of source resistance, improving the linearity of transconductance.