压阻效应
材料科学
标度系数
微晶
应变计
光电子学
压力(语言学)
复合材料
拉伤
可穿戴计算机
制作
计算机科学
嵌入式系统
冶金
语言学
替代医学
病理
内科学
医学
哲学
作者
Vaibhav Rana,Pratisha Gangwar,Jagan Singh Meena,Akhil K. Ramesh,K.N. Bhat,Samaresh Das,Pushpapraj Singh
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2020-06-04
卷期号:31 (38): 385501-385501
被引量:36
标识
DOI:10.1088/1361-6528/ab9970
摘要
Abstract The present study investigates the piezoresistive properties of polycrystalline MoS 2 film for strain-sensing applications. The gauge factor (GF) of the flexible MoS 2 device (MoS 2 /PET) has been calculated to be 102 ± 5 in the stress range from ~7 MPa to ~14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8. The effect of encapsulation layer thickness is reflected in the GF, which is attributed to the shifting of the neutral axis. However, the calculated GF is constant in the higher stress range, 80 ± 2 and 12 ± 1 for 2 μ m and 10 μ m thick SU-8, respectively. Herein, we report a cost-effective and scalable approach to fabricate large-area polycrystalline MoS 2 -based flexible sensors for a wider stress range. The encapsulated devices remained undistorted and intact for stress values beyond 14 MPa. Further, we demonstrate the durability of the fabricated sensors with body movements, such as hand gestures, for all the three types of strain sensor.
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